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APT10M11JVR

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APT10M11JVR

MOSFET N-CH 100V 144A ISOTOP

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microsemi Corporation's APT10M11JVR is an N-Channel POWER MOS V® MOSFET designed for high-power applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) capability of 144A at 25°C (Tc). With a maximum power dissipation of 450W (Tc), it is suitable for demanding thermal environments. The APT10M11JVR utilizes a Chassis Mount configuration with the ISOTOP® package, specifically SOT-227-4, miniBLOC, for efficient heat management. Key electrical parameters include a gate charge (Qg) of 450 nC at 10V and input capacitance (Ciss) of 10300 pF at 25V. The device operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is commonly employed in power conversion, motor control, and industrial power supply systems.

Additional Information

Series: POWER MOS V®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseSOT-227-4, miniBLOC
Mounting TypeChassis Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C144A (Tc)
FET Feature-
Power Dissipation (Max)450W (Tc)
Vgs(th) (Max) @ Id4V @ 2.5mA
Supplier Device PackageISOTOP®
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs450 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds10300 pF @ 25 V

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