APT10M11JVR
MOSFET N-CH 100V 144A ISOTOPManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation's APT10M11JVR is an N-Channel POWER MOS V® MOSFET designed for high-power applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) capability of 144A at 25°C (Tc). With a maximum power dissipation of 450W (Tc), it is suitable for demanding thermal environments. The APT10M11JVR utilizes a Chassis Mount configuration with the ISOTOP® package, specifically SOT-227-4, miniBLOC, for efficient heat management. Key electrical parameters include a gate charge (Qg) of 450 nC at 10V and input capacitance (Ciss) of 10300 pF at 25V. The device operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is commonly employed in power conversion, motor control, and industrial power supply systems.
Additional Information
Series: POWER MOS V®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 144A (Tc) |
| FET Feature | - |
| Power Dissipation (Max) | 450W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 2.5mA |
| Supplier Device Package | ISOTOP® |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 450 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10300 pF @ 25 V |
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