APT10M11B2VFRG
MOSFET N-CH 100V 100A T-MAXManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Microsemi Corporation's APT10M11B2VFRG is an N-Channel MOSFET from the POWER MOS V® series. This through-hole component, housed in a TO-247-3 variant (T-MAX™) package, offers a drain-to-source voltage (Vdss) of 100V. It features a continuous drain current (Id) capability of 100A at 25°C and a maximum power dissipation of 520W under the same conditions. The Rds On is specified at a maximum of 11mOhm at 500mA and 10V. Key parameters include a gate charge (Qg) of 450 nC at 10V and input capacitance (Ciss) of 10300 pF at 25V. This device operates across a temperature range of -55°C to 150°C. It finds application in power conversion and motor control systems.
Additional Information
Series: POWER MOS V®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 520W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 2.5mA |
| Supplier Device Package | T-MAX™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 450 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10300 pF @ 25 V |
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