APT10M09B2VFRG
MOSFET N-CH 100V 100A T-MAXManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation's APT10M09B2VFRG is an N-Channel POWER MOS V® MOSFET with a drain-source voltage (Vdss) of 100V. This through-hole component is rated for a continuous drain current (Id) of 100A at 25°C and a maximum power dissipation of 625W (Tc). Key electrical parameters include a maximum Rds On of 9mOhm at 50A, 10V, input capacitance (Ciss) of 9875pF at 25V, and gate charge (Qg) of 350nC at 10V. The gate-source voltage (Vgs) range is ±30V, with a threshold voltage (Vgs(th)) of 4V at 2.5mA. The device features the T-MAX™ [B2] package, suitable for applications requiring high power handling and thermal management. This MOSFET is utilized in demanding sectors such as industrial power supplies and motor control.
Additional Information
Series: POWER MOS V®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 625W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 2.5mA |
| Supplier Device Package | T-MAX™ [B2] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 350 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9875 pF @ 25 V |
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