APT10M07JVR
MOSFET N-CH 100V 225A ISOTOPManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Microsemi Corporation's APT10M07JVR is an N-Channel POWER MOS V® MOSFET designed for high-power applications. This component features a 100V drain-to-source voltage (Vdss) and supports a continuous drain current (Id) of 225A at 25°C (Tc). The device offers a maximum power dissipation of 700W (Tc) and is housed in an ISOTOP® SOT-227-4, miniBLOC package for efficient chassis mounting and thermal management. Key characteristics include a gate charge (Qg) of 1050 nC at 10V and input capacitance (Ciss) of 21600 pF at 25V. The APT10M07JVR operates within a temperature range of -55°C to 150°C (TJ) and has a gate-source voltage (Vgs) limit of ±30V. This MOSFET is utilized in industries requiring robust power switching capabilities, such as industrial power supplies and motor control.
Additional Information
Series: POWER MOS V®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 225A (Tc) |
| FET Feature | - |
| Power Dissipation (Max) | 700W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 5mA |
| Supplier Device Package | ISOTOP® |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 1050 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 21600 pF @ 25 V |
Request a Quote
Clients Also Buy
APT10M19SVRG
MOSFET N-CH 100V 75A D3PAK
APT20M38SVRG
MOSFET N-CH 200V 67A D3PAK
APT5020BVFRG
MOSFET N-CH 500V 26A TO247
