APT1002RBNG
MOSFET N-CH 1000V 8A TO247ADManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation's APT1002RBNG is an N-Channel POWER MOS IV® MOSFET designed for high-voltage applications. This through-hole component features a Drain-Source voltage (Vdss) of 1000 V and a continuous drain current (Id) of 8A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 1.6 Ohm at 4A and 10V gate-source voltage. With a maximum power dissipation of 240W (Tc) and a gate charge (Qg) of 105 nC at 10V, it is suitable for demanding power conversion and switching applications across various industrial sectors. The TO-247AD package ensures robust thermal performance.
Additional Information
Series: POWER MOS IV®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6Ohm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 240W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-247AD |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V |
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