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2N7236

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2N7236

MOSFET P-CH 100V 18A TO254AA

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microsemi Corporation's 2N7236 is a P-Channel Power MOSFET designed for demanding applications. This component features a 100V drain-source voltage (Vdss) and a continuous drain current (Id) rating of 18A at 25°C (Tc). With a maximum on-resistance (Rds On) of 200mOhm at 11A and 10V, it offers efficient power handling. The device supports a gate drive voltage of 10V and has a maximum gate-source voltage of ±20V. Its thermal performance includes a maximum power dissipation of 125W at 25°C (Tc) and 4W at 25°C (Ta). The 2N7236 is housed in a TO-254AA package with through-hole mounting, making it suitable for industrial and defense applications. This MOSFET operates within a temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-254-3, TO-254AA (Straight Leads)
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Rds On (Max) @ Id, Vgs200mOhm @ 11A, 10V
FET Feature-
Power Dissipation (Max)4W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-254AA
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V

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