2N7228U
MOSFET N-CH 500V 12A TO267ABManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation's 2N7228U is an N-Channel MOSFET designed for high-voltage applications. This surface mount component features a Drain to Source Voltage (Vdss) of 500V and a continuous drain current (Id) of 12A at 25°C (Tc). The Rds On is specified at a maximum of 415mOhm with an Id of 8A and Vgs of 10V, driven by a 10V gate voltage. Power dissipation capabilities include 4W (Ta) and 150W (Tc). The TO-267AB package is suitable for demanding thermal environments, and the device operates within a temperature range of -55°C to 150°C (TJ). Key parameters include a maximum Gate Charge (Qg) of 120 nC at 10V and a Gate Source Threshold Voltage (Vgs(th)) of 4V at 250µA. This MOSFET finds application in power supply units and industrial automation.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-267AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 415mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4W (Ta), 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-267AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
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