2N7225U
MOSFET N-CH 200V 27.4A TO267ABManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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The Microsemi Corporation 2N7225U is a high-performance N-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 200 V and a continuous Drain Current (Id) of 27.4 A at 25°C (Tc). Its Rds On is specified at a maximum of 100 mOhm when driven by 10 V and carrying 17 A. The device offers substantial power handling capabilities with a maximum dissipation of 150 W (Tc) and 4 W (Ta). Key parameters include a Gate Charge (Qg) of 115 nC at 10 V and a Gate Threshold Voltage (Vgs(th)) of 4 V at 250 µA. The 2N7225U is packaged in a TO-267AB surface mount configuration, suitable for operation across a temperature range of -55°C to 150°C (TJ). This MOSFET is commonly utilized in power switching and control circuits within industrial and telecommunications equipment.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-267AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4W (Ta), 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-267AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 115 nC @ 10 V |
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