2N6901
MOSFET N-CH 100V 1.69A TO39Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Microsemi Corporation's 2N6901 is an N-Channel MOSFET designed for through-hole mounting in a TO-39 (TO-205AF Metal Can) package. This device features a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 1.69A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 2.6 Ohms at 1.07A and 5V gate drive. With a maximum power dissipation of 8.33W (Tc), the 2N6901 is suitable for applications requiring robust switching performance. The typical gate charge (Qg) is 1 nC at 5V, and the threshold voltage (Vgs(th)) is 2V at 1mA. This component operates across a temperature range of -55°C to 150°C (TJ). It finds application in various industrial and military systems requiring reliable power switching.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AF Metal Can |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.69A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.6Ohm @ 1.07A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 8.33W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | TO-39 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 1 nC @ 5 V |
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