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2N6901

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2N6901

MOSFET N-CH 100V 1.69A TO39

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

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Microsemi Corporation's 2N6901 is an N-Channel MOSFET designed for through-hole mounting in a TO-39 (TO-205AF Metal Can) package. This device features a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 1.69A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 2.6 Ohms at 1.07A and 5V gate drive. With a maximum power dissipation of 8.33W (Tc), the 2N6901 is suitable for applications requiring robust switching performance. The typical gate charge (Qg) is 1 nC at 5V, and the threshold voltage (Vgs(th)) is 2V at 1mA. This component operates across a temperature range of -55°C to 150°C (TJ). It finds application in various industrial and military systems requiring reliable power switching.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-205AF Metal Can
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C1.69A (Tc)
Rds On (Max) @ Id, Vgs2.6Ohm @ 1.07A, 5V
FET Feature-
Power Dissipation (Max)8.33W (Tc)
Vgs(th) (Max) @ Id2V @ 1mA
Supplier Device PackageTO-39
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs1 nC @ 5 V

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