2N6849U
MOSFET P-CH 100V 6.5A 18ULCCManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation's 2N6849U is a P-channel MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) capability of 6.5A at 25°C (Tc). With a maximum Rds(on) of 300mOhm at 4.1A and 10V, it offers efficient switching performance. The device is housed in an 18-ULCC package with dimensions of 9.14x7.49, suitable for surface mounting. Key parameters include a gate charge (Qg) of 34.8 nC at 10V and a threshold voltage (Vgs(th)) of 4V at 250µA, with a maximum gate-source voltage (Vgs) of ±20V. Power dissipation is rated at 800mW (Ta) and 25W (Tc). This MOSFET is utilized in industries such as aerospace and defense, industrial automation, and medical equipment.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 18-CLCC |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 4.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 18-ULCC (9.14x7.49) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 34.8 nC @ 10 V |