2N6849
MOSFET P-CH 100V 6.5A TO39Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation 2N6849 is a P-Channel MOSFET designed for demanding applications. This through-hole component, housed in a TO-39 package, offers a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 6.5A at 25°C (Tc). With a maximum Rds On of 320mOhm at 6.5A and 10V, it facilitates efficient power switching. The device features a gate threshold voltage (Vgs(th)) of 4V at 250µA and a maximum gate-source voltage (Vgs) of ±20V. This MOSFET is rated for a maximum power dissipation of 25W at 25°C (Tc) and 800mW at 25°C (Ta). Operating across a wide temperature range from -55°C to 150°C (TJ), the 2N6849 is suitable for use in industrial control, power supply, and telecommunications equipment.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AF Metal Can |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 320mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-39 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 34.8 nC @ 10 V |
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