2N6802U
MOSFET N-CH 500V 2.5A 18ULCCManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation's 2N6802U is an N-Channel MOSFET with a drain-to-source voltage (Vds) of 500V. This device features a continuous drain current (Id) of 2.5A at 25°C (Tc) and a maximum Rds On of 1.5 Ohms at 1.5A and 10V. The gate charge (Qg) is specified at 4.46 nC maximum at 10V. Power dissipation capabilities include 800mW (Ta) and 25W (Tc). The 2N6802U is housed in an 18-ULCC surface mount package with dimensions of 9.14x7.49mm. Operating temperature range is from -55°C to 150°C (TJ). This component is utilized in applications such as power supplies, industrial automation, and telecommunications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 18-CLCC |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 18-ULCC (9.14x7.49) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.46 nC @ 10 V |
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