2N6802
MOSFET N-CH 500V 2.5A TO39Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation's 2N6802 is an N-Channel MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 500V and a continuous Drain Current (Id) of 2.5A at 25°C (Tc). The Rds On is specified at a maximum of 1.5 Ohms at 1.5A and 10V gate drive. With a Gate Charge (Qg) of 4.46 nC at 10V, it offers efficient switching characteristics. Power dissipation capabilities are 800mW (Ta) and 25W (Tc). The 2N6802 is housed in a TO-39 (TO-205AD) metal can package for through-hole mounting. Operating temperature range is -55°C to 150°C (TJ). This device is suitable for use in power supply and switching applications within industrial and military markets.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-39 (TO-205AD) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.46 nC @ 10 V |
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