2N6800U
MOSFET N-CH 400V 3A 18ULCCManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation's 2N6800U is an N-Channel MOSFET designed for demanding applications. This device features a drain-to-source voltage (Vdss) of 400V and a continuous drain current (Id) of 3A at 25°C case temperature. The low on-resistance of 1 Ohm (Max) at 2A, 10V ensures efficient power transfer. With a gate charge (Qg) of 5.75 nC (Max) at 10V, it facilitates rapid switching. The 2N6800U offers significant power dissipation capabilities, rated at 25W (Tc) and 800mW (Ta), making it suitable for high-power density designs. It is supplied in a compact 18-ULCC (9.14x7.49) surface mount package, compatible with automated assembly processes. The operating temperature range of -55°C to 150°C (TJ) ensures reliability across various environmental conditions. This MOSFET is commonly utilized in power conversion, motor control, and industrial automation systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 18-CLCC |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 18-ULCC (9.14x7.49) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.75 nC @ 10 V |
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