2N6800
MOSFET N-CH 400V 3A TO39Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation's 2N6800 is an N-Channel MOSFET designed for demanding applications. This through-hole component, housed in a TO-39 (TO-205AF Metal Can) package, offers a Drain-to-Source Voltage (Vdss) of 400V and a continuous drain current (Id) of 3A at 25°C (Tc). With a maximum on-resistance (Rds On) of 1 Ohm at 2A and 10V gate-source voltage, it provides efficient switching characteristics. The device boasts a gate charge (Qg) of 5.75 nC at 10V and a threshold voltage (Vgs(th)) of 4V at 250µA. Power dissipation capabilities include 800mW (Ta) and 25W (Tc). The 2N6800 is suitable for power switching and control circuits across various industrial sectors, operating within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AF Metal Can |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-39 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.75 nC @ 10 V |
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