2N6796U
MOSFET N-CH 100V 8A 18ULCCManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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The Microsemi Corporation 2N6796U is an N-Channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 8A at 25°C (Tc). The Rds(On) is specified at a maximum of 180mOhm at 5A and 10V gate drive. With a gate charge (Qg) of 6.34 nC at 10V, it offers efficient switching characteristics. The MOSFET is packaged in an 18-ULCC (9.14x7.49) surface mount configuration, suitable for high-density board designs. It supports a maximum gate-source voltage (Vgs) of ±20V and has a threshold voltage (Vgs(th)) of 4V at 250mA. Power dissipation is rated at 800mW (Ta) and 25W (Tc). Operating temperature range is -55°C to 150°C (TJ). This component is utilized in industries such as aerospace and defense, and industrial power control.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 18-CLCC |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250mA |
| Supplier Device Package | 18-ULCC (9.14x7.49) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.34 nC @ 10 V |
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