2N6796
MOSFET N-CH 100V 8A TO39Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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The Microsemi Corporation 2N6796 is an N-Channel MOSFET designed for robust performance in demanding applications. This device features a Drain-Source Voltage (Vdss) of 100 V and supports a continuous Drain Current (Id) of 8A at 25°C case temperature. With a maximum Rds(on) of 180mOhm at 5A and 10V gate drive, it offers efficient power switching. The MOSFET exhibits a low Gate Charge (Qg) of 6.34 nC at 10V, contributing to faster switching speeds. Its power dissipation capabilities are rated at 800mW (Ta) and 25W (Tc). Packaged in a TO-39 (TO-205AF Metal Can) through-hole configuration, the 2N6796 is suitable for various industrial and high-power control systems. Operating temperature ranges from -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AF Metal Can |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250mA |
| Supplier Device Package | TO-39 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.34 nC @ 10 V |
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