2N6790
MOSFET N-CH 200V 3.5A TO39Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Microsemi Corporation's 2N6790 is an N-Channel MOSFET with a Drain-to-Source Voltage (Vdss) of 200V. This through-hole component, packaged in a TO-39 (TO-205AF Metal Can), offers a continuous drain current of 3.5A (Tc) and a maximum power dissipation of 800mW (Tc). The Rds On is specified at 800mOhm at 2.25A, 10V. Key parameters include a gate charge (Qg) of 14.3 nC at 10V and a gate threshold voltage (Vgs(th)) of 4V at 250µA. The operating temperature range is -55°C to 150°C (TJ), with a maximum gate-source voltage (Vgs) of ±20V. This component is utilized in various industrial applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AF Metal Can |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 2.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-39 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.3 nC @ 10 V |
Request a Quote
Clients Also Buy
APTM20SKM05G
MOSFET N-CH 200V 317A SP6
APT60M75JVFR
MOSFET N-CH 600V 62A ISOTOP
JANTX2N6796U
MOSFET N-CH 100V 8A 18ULCC
