2N6788
MOSFET N-CH 100V 6A TO39Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation's 2N6788 is an N-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 6A (Tc). The device exhibits a maximum on-resistance (Rds On) of 300mOhm at 3.5A and 10V gate drive. With a maximum gate charge (Qg) of 18 nC at 10V, it facilitates efficient switching. The MOSFET is housed in a TO-39 (TO-205AF Metal Can) through-hole package, rated for a maximum power dissipation of 800mW (Tc) and an operating temperature range of -55°C to 150°C. This component is suitable for use in power switching and general-purpose amplification across various industrial sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AF Metal Can |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-39 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
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