2N6784
MOSFET N-CH 200V 2.25A TO39Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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The Microsemi Corporation 2N6784 is an N-Channel MOSFET designed for demanding applications requiring high voltage and moderate current handling. This device offers a Drain-Source Voltage (Vdss) of 200 V and a continuous Drain Current (Id) of 2.25 A at 25°C (Tc). With a maximum On-Resistance (Rds On) of 1.5 Ohms at 1.5 A and 0 Vgs, it ensures efficient power transfer. Key electrical parameters include a Gate Charge (Qg) of 8.6 nC at 10 V and a Gate-Source Threshold Voltage (Vgs(th)) of 4 V at 250 µA. This component is packaged in a TO-39 (TO-205AF Metal Can) through-hole configuration, allowing for robust mounting. The operating temperature range is -55°C to 150°C (TJ). Power dissipation is rated at 800 mW (Ta) and 15 W (Tc). This MOSFET is utilized in industries such as industrial automation, power control, and telecommunications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AF Metal Can |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.25A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.5A, 0V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta), 15W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-39 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.6 nC @ 10 V |
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