2N6782U
MOSFET N-CH 100V 3.5A 18ULCCManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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The Microsemi Corporation 2N6782U is an N-Channel MOSFET designed for demanding applications. This component features a 100V drain-to-source voltage and a continuous drain current capability of 3.5A at 25°C case temperature. Its low on-resistance of 600mOhm maximum at 2.25A and 10V gate drive voltage ensures efficient power transfer. The 2N6782U offers significant power dissipation, rated at 800mW ambient and 15W at 25°C case temperature. The device utilizes a surface mount 18-ULCC package (9.14x7.49) for compact integration. Key parameters include a maximum gate charge of 8.1 nC at 10V, a threshold voltage of 4V at 250µA, and a maximum gate-source voltage of ±20V. The operating temperature range is from -55°C to 150°C. This MOSFET is suitable for use in various industrial and defense applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 18-CLCC |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 2.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta), 15W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 18-ULCC (9.14x7.49) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.1 nC @ 10 V |
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