2N6782
MOSFET N-CH 100V 3.5A TO39Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation's 2N6782 is an N-Channel MOSFET designed for demanding applications. This through-hole component features a 100V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 3.5A at 25°C (Tc). The MOSFET utilizes Metal Oxide technology, offering a maximum Rds On of 600mOhm at 2.25A and 10V. Key parameters include a gate charge (Qg) of 8.1 nC at 10V and a gate-source voltage (Vgs) tolerance up to ±20V. Power dissipation capabilities are 800mW (Ta) and 15W (Tc). Operating across a temperature range of -55°C to 150°C (TJ), the 2N6782 is housed in a TO-39 (TO-205AF Metal Can) package. This component is suitable for use in industrial and defense sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AF Metal Can |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 2.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta), 15W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-39 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.1 nC @ 10 V |
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