2N6770
MOSFET N-CH 500V 12A TO3Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation's 2N6770 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a 500V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 12A at 25°C (Tc). The Rds On is specified at a maximum of 500mOhm when driven at 12A and 10V Vgs. With a gate charge (Qg) of 120 nC at 10V, it offers efficient switching characteristics. The device is housed in a TO-3 (TO-204AE) package, suitable for through-hole mounting. Power dissipation capabilities are 4W (Ta) and 150W (Tc). Operating temperature ranges from -55°C to 150°C (TJ), with a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 4V at 250µA. This MOSFET is utilized in power supply, industrial, and high-voltage switching applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AE |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4W (Ta), 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
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