2N6764
MOSFET N-CH 100V 38A TO3Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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The Microsemi Corporation 2N6764 is an N-Channel Power MOSFET designed for demanding power applications. This component offers a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 38A at 25°C (Tc). With a low on-resistance (Rds On) of 65mOhm at 38A and 10V, it minimizes conduction losses. The device features a gate charge (Qg) of 125 nC at 10V, indicating efficient switching characteristics. Power dissipation is rated at 4W (Ta) and 150W (Tc), supported by a TO-3 (TO-204AE) through-hole package for robust thermal management. The operating temperature range is -55°C to 150°C. This MOSFET is suitable for use in industrial and high-power switching applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AE |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 38A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4W (Ta), 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 125 nC @ 10 V |
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