2N6762
MOSFET N-CH 500V 4.5A TO204AAManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation's 2N6762 is an N-Channel MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 4.5A at 25°C (Tc). With a maximum on-resistance (Rds On) of 1.8 Ohm at 4.5A and 10V, it offers efficient power switching. The gate charge (Qg) is 40 nC maximum at 10V. This through-hole device is housed in a TO-204AA (TO-3) package, supporting a maximum power dissipation of 4W (Ta) and 75W (Tc). Operating temperature ranges from -55°C to 150°C (TJ). The 2N6762 is commonly utilized in power supply units, motor control, and industrial automation systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4W (Ta), 75W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-204AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
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