2N6760
MOSFET N-CH 400V 5.5A TO204AAManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation's 2N6760 is an N-Channel power MOSFET designed for demanding applications. Featuring a drain-source voltage (Vdss) of 400 V and a continuous drain current (Id) of 5.5A at 25°C (Tc), this component offers robust performance. The device exhibits a maximum on-resistance (Rds On) of 1.22 Ohms at 5.5A and 10V gate-source voltage (Vgs). With a gate charge (Qg) of 39 nC at 10V, it facilitates efficient switching. The 2N6760 supports a maximum gate-source voltage of ±20V and a threshold voltage (Vgs(th)) of 4V at 250µA. Power dissipation is rated at 4W (Ta) and 75W (Tc). Packaged in a TO-204AA (TO-3) through-hole configuration, this MOSFET is suitable for industrial and telecommunications sectors. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.22Ohm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4W (Ta), 75W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-204AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
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