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2N6758

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2N6758

MOSFET N-CH 200V 9A TO204AA

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microsemi Corporation's 2N6758 is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 9A at 25°C (Tc). With a maximum on-resistance (Rds On) of 490mOhm at 9A and 10V, it offers efficient power handling. The device is packaged in a TO-204AA (TO-3) through-hole package, facilitating robust mounting. Power dissipation is rated at 4W (Ta) and 75W (Tc). Key parameters include a gate charge (Qg) of 39nC at 10V and a threshold voltage (Vgs(th)) of 4V at 250µA. The operating temperature range is -55°C to 150°C. This MOSFET is suitable for use in power supply, motor control, and industrial automation applications.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Rds On (Max) @ Id, Vgs490mOhm @ 9A, 10V
FET Feature-
Power Dissipation (Max)4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-204AA
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs39 nC @ 10 V

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