APT30SCD65B
DIODE SIL CARBIDE 650V 46A TO247Manufacturer: Microsemi Corporation
Categories: Single Diodes
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Microsemi Corporation APT30SCD65B is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. This through-hole component, housed in a TO-247-2 package, offers a maximum DC reverse voltage of 650 V and a maximum forward voltage drop of 1.8 V at 30 A. With an average rectified current (Io) of 46 A, it exhibits a low reverse leakage of 600 µA at 650 V and a capacitance of 945 pF at 1 V and 1 MHz. A key characteristic is its zero reverse recovery time (trr) for currents exceeding 500 mA (Io), signifying its suitability for high-frequency switching. The operating junction temperature range is -55°C to 150°C. This SiC Schottky diode is employed in power factor correction, electric vehicle charging, and industrial power supplies.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 945pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 46A |
| Supplier Device Package | TO-247 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 30 A |
| Current - Reverse Leakage @ Vr | 600 µA @ 650 V |
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