APT30SCD120S
DIODE SIL CARB 1.2KV 99A D3PAKManufacturer: Microsemi Corporation
Categories: Single Diodes
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Microsemi Corporation APT30SCD120S is a 1200V, 99A Silicon Carbide (SiC) Schottky diode. This surface mount component, packaged in a D3PAK (TO-268-3), features a forward voltage drop of 1.8V at 30A and a reverse leakage current of 600µA at its maximum reverse voltage. With a junction operating temperature range of -55°C to 150°C, this device exhibits no significant reverse recovery time, making it suitable for high-frequency power switching applications. Its capacitance at 0V and 1MHz is 2100pF. This SiC diode is commonly utilized in industries such as industrial power supplies, electric vehicle charging, and renewable energy systems where high efficiency and performance are critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 2100pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 99A |
| Supplier Device Package | D3PAK |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 30 A |
| Current - Reverse Leakage @ Vr | 600 µA @ 1200 V |
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