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APT30SCD120S

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APT30SCD120S

DIODE SIL CARB 1.2KV 99A D3PAK

Manufacturer: Microsemi Corporation

Categories: Single Diodes

Quality Control: Learn More

Microsemi Corporation APT30SCD120S is a 1200V, 99A Silicon Carbide (SiC) Schottky diode. This surface mount component, packaged in a D3PAK (TO-268-3), features a forward voltage drop of 1.8V at 30A and a reverse leakage current of 600µA at its maximum reverse voltage. With a junction operating temperature range of -55°C to 150°C, this device exhibits no significant reverse recovery time, making it suitable for high-frequency power switching applications. Its capacitance at 0V and 1MHz is 2100pF. This SiC diode is commonly utilized in industries such as industrial power supplies, electric vehicle charging, and renewable energy systems where high efficiency and performance are critical.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting TypeSurface Mount
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky
Capacitance @ Vr, F2100pF @ 0V, 1MHz
Current - Average Rectified (Io)99A
Supplier Device PackageD3PAK
Operating Temperature - Junction-55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max) @ If1.8 V @ 30 A
Current - Reverse Leakage @ Vr600 µA @ 1200 V

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