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APT30SCD120B

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APT30SCD120B

DIODE SIL CARB 1.2KV 99A TO247

Manufacturer: Microsemi Corporation

Categories: Single Diodes

Quality Control: Learn More

The Microsemi Corporation APT30SCD120B is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. This through-hole component, housed in a TO-247-2 package, offers a maximum reverse voltage of 1200 V and a significant average rectified forward current of 99 A. Its forward voltage drop at 30 A is a maximum of 1.8 V. Notably, this device exhibits a "No Recovery Time > 500mA (Io)" characteristic, indicating extremely fast switching speeds with minimal reverse recovery losses. The junction operating temperature range spans from -55°C to 150°C. Capacitance at 0V and 1MHz is specified at 2100pF, with a reverse leakage current of 600 µA at its maximum rated voltage. This SiC Schottky diode is suitable for demanding power conversion systems across various industries, including industrial automation, electric vehicle charging, and renewable energy.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-2
Mounting TypeThrough Hole
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky
Capacitance @ Vr, F2100pF @ 0V, 1MHz
Current - Average Rectified (Io)99A
Supplier Device PackageTO-247
Operating Temperature - Junction-55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max) @ If1.8 V @ 30 A
Current - Reverse Leakage @ Vr600 µA @ 1200 V

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