APT30SCD120B
DIODE SIL CARB 1.2KV 99A TO247Manufacturer: Microsemi Corporation
Categories: Single Diodes
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The Microsemi Corporation APT30SCD120B is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. This through-hole component, housed in a TO-247-2 package, offers a maximum reverse voltage of 1200 V and a significant average rectified forward current of 99 A. Its forward voltage drop at 30 A is a maximum of 1.8 V. Notably, this device exhibits a "No Recovery Time > 500mA (Io)" characteristic, indicating extremely fast switching speeds with minimal reverse recovery losses. The junction operating temperature range spans from -55°C to 150°C. Capacitance at 0V and 1MHz is specified at 2100pF, with a reverse leakage current of 600 µA at its maximum rated voltage. This SiC Schottky diode is suitable for demanding power conversion systems across various industries, including industrial automation, electric vehicle charging, and renewable energy.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 2100pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 99A |
| Supplier Device Package | TO-247 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 30 A |
| Current - Reverse Leakage @ Vr | 600 µA @ 1200 V |
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