APT20SCD65K
DIODE SIL CARB 650V 32A TO220Manufacturer: Microsemi Corporation
Categories: Single Diodes
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The Microsemi Corporation APT20SCD65K is a 650V, 32A Silicon Carbide (SiC) Schottky diode. This through-hole component, housed in a TO-220-2 package, offers a maximum forward voltage (Vf) of 1.8V at 20A and a reverse leakage current of 400 µA at its maximum reverse voltage (Vr) of 650V. Featuring exceptionally fast switching characteristics with zero reverse recovery time above 500mA (Io), this device is ideal for high-efficiency power conversion applications in industries such as electric vehicles, industrial power supplies, and renewable energy systems. The operating junction temperature range is -55°C to 150°C. Capacitance @ Vr, F is specified as 680pF @ 100mV, 1MHz.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 680pF @ 100mV, 1MHz |
| Current - Average Rectified (Io) | 32A |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 20 A |
| Current - Reverse Leakage @ Vr | 400 µA @ 650 V |
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