APT20SCD120S
DIODE SIL CARB 1.2KV 68A D3PAKManufacturer: Microsemi Corporation
Categories: Single Diodes
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Microsemi Corporation APT20SCD120S is a Silicon Carbide (SiC) Schottky diode designed for high-performance power applications. This surface mount component, housed in a TO-268-3, D3PAK package, offers a maximum DC reverse voltage of 1200 V and an average rectified current of 68 A. Its forward voltage drop is rated at a maximum of 1.8 V at 20 A. The diode exhibits a low reverse leakage current of 400 µA at 1200 V and a capacitance of 1135 pF at 0 V and 1 MHz. Featuring a zero reverse recovery time, this SiC Schottky diode is suitable for demanding applications across industrial power, automotive systems, and renewable energy sectors. The operating junction temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 1135pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 68A |
| Supplier Device Package | D3PAK |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 20 A |
| Current - Reverse Leakage @ Vr | 400 µA @ 1200 V |
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