APT20SCD120B
DIODE SIL CARBIDE 1.2KV 68AManufacturer: Microsemi Corporation
Categories: Single Diodes
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The Microsemi Corporation APT20SCD120B is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. This device features a maximum DC reverse voltage of 1200 V and a forward voltage of 1.8 V at 20 A. With an average rectified current handling capability of 68 A, it exhibits exceptionally low leakage current of 400 µA at 1200 V. A key characteristic is its zero reverse recovery time, indicating superior switching performance for demanding power conversion circuits. The APT20SCD120B operates within a junction temperature range of -55°C to 150°C and is supplied in a tube package. This component is frequently utilized in electric vehicle charging, industrial power supplies, and renewable energy systems where efficiency and reliability are paramount.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | - |
| Mounting Type | - |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 1135pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 68A |
| Supplier Device Package | - |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 20 A |
| Current - Reverse Leakage @ Vr | 400 µA @ 1200 V |
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