APT10SCE170B
DIODE SIL CARB 1.7KV 23A TO247Manufacturer: Microsemi Corporation
Categories: Single Diodes
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Microsemi Corporation's APT10SCE170B is a Silicon Carbide (SiC) Schottky diode designed for demanding power applications. This through-hole component, housed in a TO-247-2 package, offers a maximum DC reverse voltage of 1700V and an average rectified current capability of 23A. Its forward voltage drop is rated at a maximum of 1.8V at 10A. Notably, the APT10SCE170B features zero reverse recovery time for currents greater than 500mA (Io), a characteristic of its SiC Schottky technology, significantly reducing switching losses. The diode exhibits a low reverse leakage current of 200 µA at its maximum reverse voltage. With an operating junction temperature range of -55°C to 175°C, this device is constructed for robust performance in high-power systems. Applications include power supplies, motor drives, and electric vehicle charging infrastructure.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 1120pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 23A |
| Supplier Device Package | TO-247 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1700 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 1700 V |
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