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APT10SCE170B

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APT10SCE170B

DIODE SIL CARB 1.7KV 23A TO247

Manufacturer: Microsemi Corporation

Categories: Single Diodes

Quality Control: Learn More

Microsemi Corporation's APT10SCE170B is a Silicon Carbide (SiC) Schottky diode designed for demanding power applications. This through-hole component, housed in a TO-247-2 package, offers a maximum DC reverse voltage of 1700V and an average rectified current capability of 23A. Its forward voltage drop is rated at a maximum of 1.8V at 10A. Notably, the APT10SCE170B features zero reverse recovery time for currents greater than 500mA (Io), a characteristic of its SiC Schottky technology, significantly reducing switching losses. The diode exhibits a low reverse leakage current of 200 µA at its maximum reverse voltage. With an operating junction temperature range of -55°C to 175°C, this device is constructed for robust performance in high-power systems. Applications include power supplies, motor drives, and electric vehicle charging infrastructure.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-2
Mounting TypeThrough Hole
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky
Capacitance @ Vr, F1120pF @ 0V, 1MHz
Current - Average Rectified (Io)23A
Supplier Device PackageTO-247
Operating Temperature - Junction-55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)1700 V
Voltage - Forward (Vf) (Max) @ If1.8 V @ 10 A
Current - Reverse Leakage @ Vr200 µA @ 1700 V

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