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APT10SCE120B

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APT10SCE120B

DIODE SIL CARB 1.2KV 43A TO247

Manufacturer: Microsemi Corporation

Categories: Single Diodes

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Microsemi Corporation APT10SCE120B is a Silicon Carbide Schottky diode designed for high-performance power applications. This component features a blocking voltage of 1200 V and an average rectified current capability of 43 A. The forward voltage drop is 1.8 V at 10 A, and it exhibits a low reverse leakage current of 200 µA at its maximum reverse voltage. With zero reverse recovery time, this device is ideal for high-frequency switching applications. The APT10SCE120B is housed in a TO-247-2 package and operates across a wide temperature range from -55°C to 175°C. It is suitable for use in demanding sectors such as electric vehicle charging, industrial power supplies, and renewable energy systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-2
Mounting TypeThrough Hole
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky
Capacitance @ Vr, F630pF @ 1V, 1MHz
Current - Average Rectified (Io)43A
Supplier Device PackageTO-247
Operating Temperature - Junction-55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max) @ If1.8 V @ 10 A
Current - Reverse Leakage @ Vr200 µA @ 1200 V

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