APT10SCE120B
DIODE SIL CARB 1.2KV 43A TO247Manufacturer: Microsemi Corporation
Categories: Single Diodes
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Microsemi Corporation APT10SCE120B is a Silicon Carbide Schottky diode designed for high-performance power applications. This component features a blocking voltage of 1200 V and an average rectified current capability of 43 A. The forward voltage drop is 1.8 V at 10 A, and it exhibits a low reverse leakage current of 200 µA at its maximum reverse voltage. With zero reverse recovery time, this device is ideal for high-frequency switching applications. The APT10SCE120B is housed in a TO-247-2 package and operates across a wide temperature range from -55°C to 175°C. It is suitable for use in demanding sectors such as electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 630pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 43A |
| Supplier Device Package | TO-247 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 1200 V |
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