APT10SCD65K
DIODE SIL CARB 650V 17A TO220Manufacturer: Microsemi Corporation
Categories: Single Diodes
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Microsemi Corporation's APT10SCD65K is a 650V Silicon Carbide (SiC) Schottky diode designed for high-performance applications. This through-hole component, packaged in a TO-220-2, offers a maximum forward voltage (Vf) of 1.8V at 10A and an average rectified current (Io) of 17A. It exhibits a reverse leakage current of 200 µA at 650V, with a junction operating temperature range of -55°C to 150°C. The device features zero reverse recovery time (trr), indicating superior switching characteristics for high-frequency power conversion. Its capacitance at 1V and 1MHz is 300pF. The APT10SCD65K finds application in power factor correction, electric vehicle charging, industrial power supplies, and solar inverters.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 300pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 17A |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 650 V |
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