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APT10SCD120B

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APT10SCD120B

DIODE SIL CARB 1.2KV 36A TO247

Manufacturer: Microsemi Corporation

Categories: Single Diodes

Quality Control: Learn More

The Microsemi Corporation APT10SCD120B is a Silicon Carbide (SiC) Schottky diode designed for demanding power applications. This through-hole component, housed in a TO-247-2 package, offers a maximum DC reverse voltage (Vr) of 1200V and an average rectified current (Io) of 36A. Its forward voltage (Vf) is a maximum of 1.8V at 10A, and it exhibits a low reverse leakage current of 200 µA at 1200 V. Notably, this device features no recovery time above 500mA (Io), contributing to high efficiency. The APT10SCD120B is suitable for use in industrial power supplies, electric vehicle charging, and renewable energy systems. It operates across a junction temperature range of -55°C to 150°C. The capacitance at Vr=0V and 1MHz is 600pF.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-2
Mounting TypeThrough Hole
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky
Capacitance @ Vr, F600pF @ 0V, 1MHz
Current - Average Rectified (Io)36A
Supplier Device PackageTO-247
Operating Temperature - Junction-55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max) @ If1.8 V @ 10 A
Current - Reverse Leakage @ Vr200 µA @ 1200 V

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