APT10SCD120B
DIODE SIL CARB 1.2KV 36A TO247Manufacturer: Microsemi Corporation
Categories: Single Diodes
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The Microsemi Corporation APT10SCD120B is a Silicon Carbide (SiC) Schottky diode designed for demanding power applications. This through-hole component, housed in a TO-247-2 package, offers a maximum DC reverse voltage (Vr) of 1200V and an average rectified current (Io) of 36A. Its forward voltage (Vf) is a maximum of 1.8V at 10A, and it exhibits a low reverse leakage current of 200 µA at 1200 V. Notably, this device features no recovery time above 500mA (Io), contributing to high efficiency. The APT10SCD120B is suitable for use in industrial power supplies, electric vehicle charging, and renewable energy systems. It operates across a junction temperature range of -55°C to 150°C. The capacitance at Vr=0V and 1MHz is 600pF.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 600pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 36A |
| Supplier Device Package | TO-247 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 1200 V |
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