1N6629US
DIODE GEN PURP 880V 1.4A A-MELFManufacturer: Microsemi Corporation
Categories: Single Diodes
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The Microsemi Corporation 1N6629US is a general-purpose diode designed for demanding applications. This surface-mount component, housed in an A-MELF package, offers a maximum reverse voltage of 880V and an average rectified current capability of 1.4A. Featuring a fast recovery time of 50 ns, it is suitable for power supply circuits and switching applications. The diode exhibits a typical forward voltage of 1.4V at its rated current and a low reverse leakage of 2 µA at 880V. With a junction capacitance of 40pF at 10V and 1MHz, it minimizes signal integrity issues. The operating temperature range is from -65°C to 150°C. This component is commonly found in industrial, telecommunications, and automotive sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, A |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 40pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 1.4A |
| Supplier Device Package | A-MELF |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 880 V |
| Voltage - Forward (Vf) (Max) @ If | 1.4 V @ 1.4 A |
| Current - Reverse Leakage @ Vr | 2 µA @ 880 V |
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