JANTXV2N5014
TRANS NPN 900V 0.2A TO5Manufacturer: Microsemi Corporation
Categories: Single Bipolar Transistors
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Microsemi Corporation JANTXV2N5014 is a high-voltage NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a maximum collector-emitter breakdown voltage of 900 V and a continuous collector current capability of 200 mA, with a power dissipation rating of 1 W. The JANTXV2N5014 is housed in a TO-205AA (TO-5-3 Metal Can) through-hole package. It exhibits a minimum DC current gain (hFE) of 30 at 20 mA collector current and 10 V collector-emitter voltage. The device maintains a low collector cutoff current of 10 nA (ICBO). Qualified to MIL-PRF-19500/727, this transistor is suitable for operation across a wide temperature range from -65°C to 200°C (TJ). Its robust specifications make it applicable in aerospace, defense, and high-voltage power supply circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 20mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 900 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/727 |