JANTXV2N3251A
TRANS PNP 60V 0.2A TO39Manufacturer: Microsemi Corporation
Categories: Single Bipolar Transistors
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Microsemi Corporation JANTXV2N3251A is a PNP bipolar junction transistor qualified to MIL-PRF-19500/323. This through-hole component features a TO-39 (TO-205AD) metal can package. It offers a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 200mA. The device has a maximum power dissipation of 360mW and a saturation voltage (Vce(sat)) of 500mV at 5mA base current and 50mA collector current. The minimum DC current gain (hFE) is 100 at 10mA collector current and 1V collector-emitter voltage. The operating temperature range is -65°C to 200°C. This transistor is suitable for applications in defense and aerospace.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 360 mW |
| Qualification | MIL-PRF-19500/323 |
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