JANTX2N3960
TRANS NPN 12V TO18Manufacturer: Microsemi Corporation
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microsemi Corporation JANTX2N3960: This NPN bipolar junction transistor (BJT) offers a 12V collector-emitter breakdown voltage and a maximum power dissipation of 400mW. Designed for through-hole mounting in a TO-18 (TO-206AA) metal can package, it features a minimum DC current gain (hFE) of 60 at 10mA collector current and 1V Vce. The collector cutoff current (ICBO) is specified at a maximum of 10µA. Saturation voltage (Vce(sat)) is capped at 300mV with a 3mA base current and 30mA collector current. This component is qualified to MIL-PRF-19500/399, indicating its suitability for demanding military applications. Its operating temperature range extends from -65°C to 200°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 3mA, 30mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-18 (TO-206AA) |
| Grade | Military |
| Voltage - Collector Emitter Breakdown (Max) | 12 V |
| Power - Max | 400 mW |
| Qualification | MIL-PRF-19500/399 |
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