JANSR2N2221AUB
TRANS NPN 50V 0.8A UBManufacturer: Microsemi Corporation
Categories: Single Bipolar Transistors
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Microsemi Corporation's JANSR2N2221AUB is a military-grade NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a 50V collector-emitter breakdown voltage and a maximum collector current of 800mA, with a power dissipation of 500mW. It offers a minimum DC current gain (hFE) of 40 at 150mA and 10V. The transistor operates across an extended temperature range of -65°C to 200°C (TJ). Packaged in a 3-SMD, No Lead UB configuration suitable for surface mounting, this device meets MIL-PRF-19500/255 qualification. Its characteristics make it suitable for use in aerospace, defense, and high-reliability industrial systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/255 |