JANSP2N3634UB
NPN TRANSISTORManufacturer: Microsemi Corporation
Categories: Single Bipolar Transistors
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Microsemi Corporation's JANSP2N3634UB is a high-reliability PNP bipolar junction transistor designed for demanding applications. This military-grade component, qualified to MIL-PRF-19500/357, features a 140 V collector-emitter breakdown voltage and a 1 W maximum power dissipation. With a specified minimum DC current gain (hFE) of 50 at 50mA and 10V, and a collector current of up to 10 µA (max), it is suitable for switching and amplification circuits. The device operates across a wide temperature range of -65°C to 200°C (TJ) and is presented in a compact 4-SMD, No Lead (UB) surface mount package, supplied in bulk. Its robust specifications make it a reliable choice for aerospace, defense, and industrial systems requiring high performance and extended operational life.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 50mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 10 µA |
| Voltage - Collector Emitter Breakdown (Max) | 140 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/357 |
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