JANSP2N3634
NPN TRANSISTORManufacturer: Microsemi Corporation
Categories: Single Bipolar Transistors
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Microsemi Corporation JANSP2N3634 is a high-reliability NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a 140 V collector-emitter breakdown voltage and a maximum collector current of 10 µA, with a comparable collector cutoff current. It offers a minimum DC current gain (hFE) of 50 at 50mA collector current and 10V collector-emitter voltage. The transistor exhibits a Vce(sat) of 600mV at 5mA base current and 50mA collector current. Rated for 1 W maximum power dissipation, the JANSP2N3634 is housed in a TO-39 (TO-205AD) metal can package suitable for through-hole mounting. Its military-grade qualification (MIL-PRF-19500/357) and wide operating temperature range of -65°C to 200°C make it suitable for aerospace, defense, and industrial applications requiring robust performance and extended service life.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 50mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 10 µA |
| Voltage - Collector Emitter Breakdown (Max) | 140 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/357 |
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