JANSM2N3634
NPN TRANSISTORManufacturer: Microsemi Corporation
Categories: Single Bipolar Transistors
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Microsemi Corporation JANSM2N3634 is a military-grade PNP bipolar junction transistor (BJT) designed for demanding applications. This through-hole component, housed in a TO-39 (TO-205AD) metal can package, offers a maximum collector-emitter breakdown voltage of 140 V. It features a collector current rating of 10 µA and a maximum power dissipation of 1 W. The device exhibits a minimum DC current gain (hFE) of 50 at 50mA and 10V, with a saturation voltage (Vce(sat)) of 600mV at 5mA and 50mA. Its operational temperature range spans from -65°C to 200°C. Qualified under MIL-PRF-19500/357, this transistor is suitable for use in aerospace, defense, and high-reliability industrial systems.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 50mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 10 µA |
| Voltage - Collector Emitter Breakdown (Max) | 140 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/357 |
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