JANSL2N2221A
NPN TRANSISTORManufacturer: Microsemi Corporation
Categories: Single Bipolar Transistors
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The Microsemi Corporation JANSL2N2221A is an NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a 50V collector-emitter breakdown voltage and a maximum continuous collector current of 800mA. With a power dissipation rating of 500mW and a minimum DC current gain (hFE) of 40 at 150mA and 10V, it offers robust performance. The transistor operates within a wide temperature range of -65°C to 200°C. Packaged in a TO-18 (TO-206AA) metal can with through-hole mounting, this device meets MIL-PRF-19500/255 qualification, indicating its suitability for military and high-reliability applications. Its saturated voltage (Vce (Max)) is 1V at 50mA base current and 500mA collector current. The JANSL2N2221A is commonly utilized in aerospace, defense, and industrial control systems requiring high-reliability switching and amplification.
Additional Information
Series: -RoHS Status: Request inventory verificationManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-18 (TO-206AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/255 |
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