JANSH2N2221AUA
NPN TRANSISTORManufacturer: Microsemi Corporation
Categories: Single Bipolar Transistors
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Microsemi Corporation JANSH2N2221AUA is an NPN bipolar junction transistor (BJT) designed for high-reliability applications. This surface mount device, housed in a 4-SMD, No Lead (UA) package, offers a collector-emitter breakdown voltage of 50 V and a continuous collector current capability of 800 mA. With a maximum power dissipation of 650 mW and a minimum DC current gain (hFE) of 40 at 150 mA and 10 V, it is suitable for general-purpose amplification and switching. The operating temperature range of -65°C to 200°C (TJ) and its MIL-PRF-19500/255 qualification indicate its suitability for military and demanding industrial environments. This component finds application in various defense and aerospace systems.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 650 mW |
| Qualification | MIL-PRF-19500/255 |