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JANSH2N2221AL

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JANSH2N2221AL

P CHANNEL MOSFET

Manufacturer: Microsemi Corporation

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microsemi Corporation's JANSH2N2221AL is an NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 800mA. It offers a minimum DC current gain (hFE) of 40 at 150mA and 10V. The transistor exhibits a collector-emitter saturation voltage (Vce(sat)) of 1V at 50mA collector current and 50mA base current. With a maximum power dissipation of 500mW, it operates reliably across a wide temperature range from -65°C to 200°C. The JANSH2N2221AL is housed in a TO-18 (TO-206AA) metal can package, facilitating through-hole mounting. This device is qualified to MIL-PRF-19500/255, indicating its suitability for military and high-reliability applications.

Additional Information

Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-206AA, TO-18-3 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
Current - Collector Cutoff (Max)50nA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageTO-18 (TO-206AA)
GradeMilitary
Current - Collector (Ic) (Max)800 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max500 mW
QualificationMIL-PRF-19500/255

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