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JANSH2N2221A

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JANSH2N2221A

P CHANNEL MOSFET

Manufacturer: Microsemi Corporation

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microsemi Corporation JANSH2N2221A is an NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a 50V collector-emitter breakdown voltage and a maximum collector current of 800mA. With a DC current gain (hFE) of at least 40 at 150mA and 10V, and a Vce saturation of 1V at 50mA and 500mA, it offers robust performance. The device is rated for 500mW power dissipation and operates across a wide temperature range of -65°C to 200°C. Packaged in a TO-18 (TO-206AA) metal can, the JANSH2N2221A meets MIL-PRF-19500/255 qualification, making it suitable for military and high-reliability electronic systems.

Additional Information

Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-206AA, TO-18-3 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
Current - Collector Cutoff (Max)50nA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageTO-18 (TO-206AA)
GradeMilitary
Current - Collector (Ic) (Max)800 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max500 mW
QualificationMIL-PRF-19500/255

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