JANSH2N2221A
P CHANNEL MOSFETManufacturer: Microsemi Corporation
Categories: Single Bipolar Transistors
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Microsemi Corporation JANSH2N2221A is an NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a 50V collector-emitter breakdown voltage and a maximum collector current of 800mA. With a DC current gain (hFE) of at least 40 at 150mA and 10V, and a Vce saturation of 1V at 50mA and 500mA, it offers robust performance. The device is rated for 500mW power dissipation and operates across a wide temperature range of -65°C to 200°C. Packaged in a TO-18 (TO-206AA) metal can, the JANSH2N2221A meets MIL-PRF-19500/255 qualification, making it suitable for military and high-reliability electronic systems.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-18 (TO-206AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/255 |
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