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JANSF2N2907AUBC

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JANSF2N2907AUBC

NPN TRANSISTOR

Manufacturer: Microsemi Corporation

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microsemi Corporation JANSF2N2907AUBC is a PNP bipolar junction transistor (BJT) designed for demanding applications. This surface-mount device, supplied in Bulk packaging, offers a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 600mA. It features a power dissipation rating of 500mW and a minimum DC current gain (hFE) of 100 at 150mA and 10V. The transistor operates across a wide temperature range of -65°C to 200°C (TJ) and is qualified to MIL-PRF-19500/291, indicating its suitability for military and aerospace environments. The JANSF2N2907AUBC is commonly utilized in power switching and amplification circuits within these high-reliability sectors.

Additional Information

Series: -RoHS Status: Request inventory verificationManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case3-CLCC
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)50nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageUBC
GradeMilitary
Current - Collector (Ic) (Max)600 mA
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max500 mW
QualificationMIL-PRF-19500/291

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